Carbon implantation process and carbon ion precursor composition
AssigneeAxcelis Technologies, Inc.
InventorsWilliam D. Lee, Daniel R. Tieger, Tseh-Jen Hsieh
Life of this patent
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Abstract
Methods and carbon ion precursor compositions for implanting carbon ions generally includes vaporizing and ionizing a gas mixture including carbon oxide and methane gases in an ion source to create a plasma and produce carbon ions. The ionized carbon within the plasma is then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit the ionized carbon to pass therethrough and implant into a workpiece.
Claims14
A process for implanting carbon ions into a workpiece, the process comprising:
- supplying a mixture of a carbon oxide gas and a methane gas to an ion source;
- ionizing the carbon oxide gas and the methane gas with the ion source at a stoichiometry effective to create a feedstream consisting essentially of plasma consisting essentially of ionized carbon and a byproduct of water;
- extracting the ionized carbon within the plasma to form an ion beam;
- and
- exposing the workpiece to the ion beam to implant the ionized carbon into the workpiece.
A process of implanting carbon ions into a workpiece, comprising
- utilizing an ion implantation apparatus comprising an ion source adapted to ionize a process gas into an ion beam, and a mass analyzer adapted to pass through only selected species of said ion beam;
- supplying a stoichiometric mixture of a carbon oxide gas and a methane gas to the ion source;
- ionizing the carbon oxide gas and methane gas to produce a feedstream consisting essentially of plasma consisting essentially of carbon ions and a byproduct of water vapor;
- using the mass analyzer to remove unwanted species from the ion beam;
- and
- implanting the carbon ions into the workpiece.
An ion implantation system, comprising:
- an ion source for generating an ion beam;
- a beamline for transporting the ion beam along a beam path;
- and
- a workpiece support for scanning a workpiece in the beam path of the ion beam for implanting ions into the workpiece;
- said ion implantation system further comprising:
- a first gas source for delivering a carbon ion precursor composition in the form of a carbon oxide gas to said ion source;
- a second gas source for delivering a second gas in the form of a methane gas;
- and
- a controller coupled to said first and second gas sources for controlling a flow of gas therefrom to meter a 1 to 1 stoichiometric amount of carbon oxide and methane gases, respectively, to the ion source, wherein the ion sources is configured to produce a feedstream consisting essentially of plasma consisting essentially of carbon ions and a byproduct of water vapor.
Dependencies are inferred from the claim text.