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US 8,524,582 B2Granted
Silicon-germanium hydrides and methods for making and using same
AssigneeArizona Board of Regents
InventorsJohn Kouvetakis, Cole J. Ritter, III
Life of this patent
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Abstract
The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
Claims10
A semiconductor structure, comprising a substrate;
- and
- an Si—Ge layer comprising an Si—Ge backbone that consists essentially of the reaction products of one or more compounds selected from the group consisting of GeH3—SiH2—GeH2—GeH3;
- GeH3—GeH2—GeH2—GeH2—SiH3;
- GeH3—GeH2—GeH2—SiH2—GeH3;
- GeH3—GeH2—SiH2—GeH2—GeH3;
- GeH[(SiH3)(GeH3)(GeH2)](GeH3);
- GeH[(GeH3)2(GeH2)](SiH3);
- SiH[(GeH3)2(GeH2)](GeH3);
- and GeH[(GeH3)2 (SiH2)](GeH3).
6 more elements
Dependencies are inferred from the claim text.