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US 8,524,581 B2Granted
GaN epitaxy with migration enhancement and surface energy modification
AssigneeIntermolecular, Inc.
InventorsPhilip A. Kraus, Boris Borisov, Thai Cheng Chua, Sandeep Nijhawan, Yoga Saripalli
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Abstract
Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.
Claims19
A method for growing a film comprising:
- a) providing a deposition chamber comprising a plurality of processing regions wherein the processing regions are not in fluid contact with one another;
- b) exposing a substrate to one or more Group III precursors in a first processing region;
- c) exposing the substrate to one or more surfactant precursors in a second processing region, wherein the exposure to one or more surfactant precursors forms a surfactant layer with thickness less than two monolayers;
- d) exposing the substrate to one or more Group V precursors in a third processing region;
- and
- repeating steps b) through d) until a desired thickness of the film is reached.
3 more elements
Dependencies are inferred from the claim text.