Semiconductor device and method of forming reconstituted wafer with larger carrier to achieve more eWLB packages per wafer with encapsulant deposited under temperature and pressure

A method of making a semiconductor device, comprising:

• providing a semiconductor wafer including a plurality of known good semiconductor die formed within a surface area of the semiconductor wafer;
• singulating the known good semiconductor die from the semiconductor wafer;
• providing a carrier including a surface area lamer than the surface area of the semiconductor wafer;
• disposing the known good semiconductor die over a surface of the carrier to form a reconstituted wafer, wherein a number of the known good semiconductor die disposed side-by-side and non-overlapping over the carrier is greater than the total number of the known good semiconductor die singulated from the semiconductor wafer;
• providing a chase mold including an upper mold support and lower mold support with spring-loaded lifter pins;
• disposing the reconstituted wafer within the chase mold over the lower mold support and spring-loaded lifter pins;
• closing the chase mold to compress the spring-loaded lifter pins which apply pressure to hold the upper mold support and lower mold support against opposing surfaces of the reconstituted wafer with the known good semiconductor die disposed within a cavity of the chase mold;
• providing an encapsulant around known good the semiconductor die within the cavity under temperature and pressure;
• removing the reconstituted wafer from the chase mold;
• and
• forming an interconnect structure over the reconstituted wafer.

A method of making a semiconductor device, comprising:

• providing a semiconductor wafer including a plurality of semiconductor die formed within a surface area of the semiconductor wafer;
• testing the semiconductor die to confirm as known good semiconductor die;
• singulating the semiconductor die from the semiconductor wafer;
• providing a carrier including a surface area larger than the surface area of the semiconductor wafer;
• and
• disposing the known good semiconductor die over the carrier to form a reconstituted wafer, wherein a number of the known good semiconductor die disposed side-by-side and non-overlapping over the carrier is greater than the total number of the known good semiconductor die singulated from the semiconductor wafer.

A method of making a semiconductor device, comprising:

• providing a semiconductor wafer including a plurality of semiconductor die formed within a surface area of the semiconductor wafer;
• testing the semiconductor die to confirm as known good semiconductor die;
• singulating the semiconductor die from the semiconductor wafer;
• providing a first carrier;
• providing a second carrier including a surface area less than a surface area of the first carrier;
• and
• disposing the known good semiconductor die over the first carrier using a set of manufacturing tools to form a reconstituted wafer, wherein a number of the known good semiconductor die disposed side-by-side and non-overlapping over the first carrier is greater than the total number of the known good semiconductor die singulated from the semiconductor wafer.

A method of making a semiconductor device, comprising:

• providing a semiconductor wafer including a plurality of semiconductor die;
• testing the semiconductor die to confirm as known good semiconductor die;
• singulating the semiconductor die from the semiconductor wafer;
• providing a carrier;
• and
• disposing the known good semiconductor die over a surface of the carrier to form a reconstituted wafer, wherein a number of the known good semiconductor die disposed side-by-side and non-overlapping over the carrier is greater than the total number of the semiconductor die singulated from the semiconductor wafer.