US 8,524,575 B2 · Group III nitride crystal and method for producing the same

Abstract

A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001] direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q.

Claims8

Dependent claims

A group III nitride crystal characterized by the following properties:

having a main plane with a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1};
an oxygen-atom concentration of between 1×1016 cm−3 and 4×1019 cm−3 inclusive;
a silicon-atom concentration of between 6×1014 cm−3 and 5×1018 cm−3 inclusive;
a hydrogen-atom concentration of between 6×1016 cm−3 and 1×1018 cm−3 inclusive;
a carbon-atom concentration of between 1×1016 cm−3 and 1×1018 cm−3 inclusive;
and
a planar defect density of between 0.3 and 51 defects/cm in a cross-section through the crystal perpendicular to either the <1-210>direction or to the <10-10>direction.

4 more elements

Dependencies are inferred from the claim text.

Group III nitride crystal and method for producing the same

Life of this patent

Group III nitride crystal and method for producing the same

Life of this patent

Abstract

Claims8