Method for manufacturing solid-state image pickup-device
AssigneeSony Corporation
InventorChiaki Sakai
Life of this patent
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Abstract
A method for manufacturing a solid-state image device which includes the steps of: forming a silicon epitaxial growth layer on a silicon substrate; forming photoelectric conversion portions, transfer gates, and a peripheral circuit portion in and/or on the silicon epitaxial growth layer and further forming a wiring layer on the silicon epitaxial growth layer; forming a split layer in the silicon substrate at a side of the silicon epitaxial growth layer; forming a support substrate on the wiring layer; peeling the silicon substrate from the split layer so as to leave a silicon layer formed of a part of the silicon substrate at a side of the support substrate; and planarizing the surface of the silicon layer.
Claims12
A method for manufacturing a solid-state image device, comprising the steps of:
- forming a first silicon layer on a silicon substrate;
- forming a photoelectric conversion portion and transfer gate with respect to the first silicon layer and forming a wiring layer on the first silicon layer;
- forming a split layer in the silicon substrate;
- forming a second substrate on the wiring layer;
- removing a portion of the silicon substrate and leaving a second silicon layer at a side of the second substrate, the second silicon layer being from a remaining portion of the silicon substrate;
- and
- planarizing a surface of the second silicon layer.
Dependencies are inferred from the claim text.