Method for separating a semiconductor layer from a substrate by irradiating with laser pulses
AssigneeOSRAM Opto Semiconductors GmbH
InventorsStephan Kaiser, Volker Härle, Berthold Hahn
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Abstract
A method for producing a semiconductor component, in which a semiconductor layer is separated from a substrate by irradiation with laser pulses, the pulse duration of the laser pulses being less than or equal to 10 ns. The laser pulses have a spatial beam profile with a flank slope is chosen to be gentle enough to prevent cracks in the semiconductor layer that arise as a result of thermally induced lateral stresses during the separation of semiconductor layer and substrate.
Claims1
A method for producing a semiconductor component, in which a semiconductor layer is separated from a substrate by irradiation with laser pulses, a pulse duration of the laser pulses being less than or equal to 10 ns,
- wherein the laser pulses have a spatial Gaussian beam profile with a flank slope configured to prevent cracks in the semiconductor layer that arise as a result of thermally induced lateral stresses during the separation of the semiconductor layer and the substrate.
Dependencies are inferred from the claim text.