Methods of processing units comprising crystalline materials, and methods of forming semiconductor-on-insulator constructions

A method of forming a semiconductor-on-insulator construction, comprising:

• forming a unit comprising dielectric material over monocrystalline semiconductor material;
• forming a damage region within the monocrystalline semiconductor material, a portion of the monocrystalline semiconductor material being between the damage region and the dielectric material;
• attaching the unit to a handle component through the dielectric material to form an assembly comprising the handle component and the unit;
• utilizing an electrostatic chuck to contort the assembly and thereby induce cleavage along the damage region and form the semiconductor-on-insulator construction;
• the semiconductor-on-insulator construction comprising the dielectric material as the insulator, and comprising at least some of said portion of the semiconductor material as the semiconductor;
• wherein the forming the damage region comprises implanting hydrogen into the monocrystalline semiconductor material;
• and
• wherein the hydrogen is implanted at a dose of at least about 1×1017 particles/cm2.

A method of forming a semiconductor-on-insulator construction, comprising:

• forming a unit comprising dielectric material over monocrystalline semiconductor material;
• forming a damage region within the monocrystalline semiconductor material, a portion of the monocrystalline semiconductor material being between the damage region and the dielectric material;
• attaching the unit to a handle component through the dielectric material to form an assembly comprising the handle component and the unit;
• contorting the assembly along a curved outer surface of a chuck to thereby induce cleavage along the damage region and form the semiconductor-on-insulator construction;
• the semiconductor-on-insulator construction comprising the dielectric material as the insulator, and comprising at least some of said portion of the semiconductor material as the semiconductor;
• and
• wherein the contorting comprises engaging the assembly along the curved outer surface while the assembly is in a first orientation relative to the curved outer surface, and then flipping the assembly and engaging the assembly along the curved outer surface while the assembly in a second orientation relative to the curved outer surface, with the second orientation being opposite to the first orientation.