Method of fabricating thin-film transistor substrate
AssigneeSamsung Display Co., Ltd.
InventorsHyung-Jun Kim, Chang-Oh Jeong, Il-Yong Yoon
Life of this patent
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Abstract
A method of fabricating a thin-film transistor (TFT) substrate includes forming a gate electrode on a substrate; forming an insulating film on the gate electrode; forming an amorphous semiconductor pattern on the insulating film; and forming a source electrode separated from a drain electrode on the amorphous semiconductor pattern; forming a light-concentrating layer, which includes a protrusion, on the amorphous semiconductor pattern, the source electrode, and the drain electrode; and crystallizing at least part of the amorphous semiconductor pattern by irradiating light to the protrusion of the light-concentrating layer.
Claims25
A method of fabricating a thin-film transistor (TFT) substrate, the method comprising:
- forming a gate electrode on a substrate;
- forming an insulating film on the gate electrode;
- forming an amorphous semiconductor pattern on the insulating film;
- forming a source electrode and a drain electrode, which are spaced from each other, on the amorphous semiconductor pattern;
- forming a light-concentrating layer comprising a protrusion on the amorphous semiconductor pattern, the source electrode, and the drain electrode, the position of the protrusion corresponding to the amorphous semiconductor pattern;
- and
- crystallizing at least part of the amorphous semiconductor pattern by irradiating light to the protrusion.
A method of fabricating a thin film transistor (TFT) substrate, the method comprising:
- forming a first gate electrode and a second gate electrode on a substrate;
- forming an insulating film on the first gate electrode and the second gate electrode;
- forming a first amorphous semiconductor pattern and a second amorphous semiconductor pattern on the insulating film, forming a first source electrode and a first drain electrode, which are spaced apart from each other, on the first amorphous semiconductor pattern, and forming a second source electrode and a second drain electrode, which are spaced apart from each other, on the second amorphous semiconductor pattern;
- forming a light-concentrating layer comprising a protrusion on the first amorphous semiconductor pattern, the second amorphous semiconductor pattern, the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode;
- and
- crystallizing at least part of the first amorphous semiconductor pattern by irradiating light to the protrusion of the light-concentrating layer,
- wherein the protrusion corresponds to a portion of the first amorphous semiconductor pattern exposed by a separation between the first source electrode and the first drain electrode.
A method of fabricating a thin film transistor (TFT), the method comprising:
- forming an amorphous semiconductor on a substrate;
- forming a drain electrode and a source electrode on the amorphous semiconductor, a portion of the amorphous semiconductor being exposed by a separation between the drain electrode and the source electrode;
- forming a layer comprising a protrusion on the exposed portion of the amorphous semiconductor;
- and
- crystallizing at least a part of the exposed portion of the amorphous semiconductor by irradiating the protrusion with light,
- wherein the protrusion focuses the light onto the exposed portion of the amorphous semiconductor.
Dependencies are inferred from the claim text.