Thyristor-based memory cells, devices and systems including the same and methods for forming the same
AssigneeMicron Technology, Inc.
InventorSanh D. Tang
Life of this patent
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Abstract
Semiconductor devices including a plurality of thyristor-based memory cells, each having a cell size of 4F2, and methods for forming the same are provided. The thyristor-based memory cells each include a thyristor having vertically superposed regions of alternating dopant types, and a control gate. The control gate may be electrically coupled with one or more of the thyristors and may be operably coupled to a voltage source. The thyristor-based memory cells may be formed in an array on a conductive strap, which may function as a cathode or a data line. A system may be formed by integrating the semiconductor devices with one or more memory access devices or conventional logic devices, such as a complementary metal-oxide-semiconductor (CMOS) device.
Claims11
A method of forming a semiconductor device, comprising:
- forming a semiconductor structure comprising amorphous silicon overlying an electrically insulative material, a conductive material overlying the amorphous silicon, a doped material overlying the conductive material and a doped crystalline silicon overlying the doped material;
- removing portions of each of the doped crystalline silicon, the doped material, the conductive material and the amorphous silicon to form a plurality of channels exposing the electrically insulative material;
- removing portions of the doped crystalline silicon and the doped material to form a plurality of pillars, each pillar of the plurality of pillars including a first doped region and a second doped region oppositely doped with respect to the first doped region;
- forming at least one control gate on at least one surface of each pillar of the plurality of pillars;
- exposing the plurality of pillars to a first dopant to form a third doped region, oppositely doped with respect to the second doped region;
- and
- exposing the plurality of pillars to a second dopant to form a fourth doped region.
Dependencies are inferred from the claim text.