High-performance single-crystalline N-type dopant-doped metal oxide nanowires for transparent thin film transistors and active matrix organic light-emitting diode displays

Abstract

Methods, materials, apparatus and systems are described for implementing high-performance arsenic (As)-doped indium oxide (In2O3) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diodes (AMOLED) displays. In one implementation, a method of fabricating n-type dopant-doped metal oxide nanowires includes dispersing nanoparticle catalysts on a Si/SiO2 substrate. n-type dopant-doped metal oxide nanowires are grown on the Si/SiO2 substrate using a laser ablation process. The laser ablation process can include: placing n-type dopant at an upper stream of a furnace; placing the Si/SiO2 substrate at a down stream end of the furnace; heating the furnace; adding hydrogen to a carrier gas comprising argon and oxygen; flowing the hydrogen added carrier gas over the Si/SiO2 substrate to suppress oxidation processes and incorporate the n-type dopant into the metal oxide nanowires; and cooling the n-type dopant-doped metal oxide nanowires grown on the Si/SiO2 substrate.

Dependencies are inferred from the claim text.