Square pillar-shaped switching element for memory device and method of manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorHae Chan Park
Life of this patent
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Abstract
A switching element for a memory device includes a base layer including a plurality of line-type trenches. First insulation patterns are formed on the base layer excluding the trenches. First diode portions are formed on the bottoms of the trenches in the form of a thin film. Second insulation patterns are formed on the first diode portions and are spaced apart from each other to form holes in the trenches having the first diode portions provided therein. Square pillar-shaped second diode portions are formed in the holes over the first diode portions.
Claims11
A method of manufacturing a switching element for a memory device, comprising the steps of:
- forming line-type hard mask patterns spaced apart from each other at regular intervals on a base layer;
- etching the base layer exposed by the line-type hard mask patterns to form a plurality of line-type trenches;
- forming first diode portions on the bottoms of the trenches;
- embedding an insulation material in the trenches having the first diode portions therein;
- forming line-type mask patterns spaced apart from each other at regular intervals on the line-type hard mask patterns and the insulation material in a direction perpendicular to the line-type hard mask patterns;
- removing the insulation material exposed by the line-type mask patterns to form holes exposing surfaces of the first diode portions;
- removing the line-type mask patterns;
- and
- forming second diode portions in the holes.
Dependencies are inferred from the claim text.