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US 8,524,517 B2Granted
Copper blend I-VII compound semiconductor light-emitting devices
AssigneeUniversity of Seoul Industry Cooperation Foundation
InventorDoyeol Ahn
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Abstract
Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.
Claims12
A method of making a semiconductor light-emitting device comprising:
- depositing an n-type contact layer on a substrate;
- depositing an n-type region on the n-type contact layer;
- depositing a first barrier layer on the n-type region;
- depositing a copper blend I-VII compound semiconductor light-emitting layer on the first barrier layer;
- depositing a second barrier layer on the copper blend I-VII compound semiconductor light-emitting layer;
- depositing a p-type region on the second barrier layer;
- and
- depositing an electrode, wherein:
- at least one of the first barrier layer or the second barrier layer includes a copper blend I-VII compound semiconductor material.
6 more elements
Dependencies are inferred from the claim text.