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US 8,524,513 B2Granted
Measuring floating body voltage in silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET)
AssigneeInternational Business Machines Corporation
InventorsSourabh Khandelwal, Josef S. Watts
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Abstract
In one embodiment, a body region of a body-contacted silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) is connected to a gate of another MOSFET in a sensing circuit to form a floating body node. The voltage at the floating body node is accurately obtained at the output of the sensing circuit and used to provide an estimate of required floating body voltage over a full device operating range.
Claims5
A method, comprising:
- providing a first body-contacted silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) device having a drain region, a source region, a body region separating the drain region from the source region, and a gate disposed above the body region, the first body-contacted SOI MOSFET device coupled to a sensing circuit having an input and an output, wherein the input of the sensing circuit has a high impedence and the output of the sensing circuit has a low impedence, wherein the body region of the first body-contacted SOI MOSFET device is coupled to the input of the sensing circuit to form a floating body node having a voltage Vbody;
- measuring the voltage at the output of the sensing circuit, the voltage at the output of the sensing circuit represented as Vout;
- and
- determining the voltage of the floating body node Vbody from the voltage measurement at the output of the sensing circuit Vout, wherein Vbody=2*Vout.
1 more element
Dependencies are inferred from the claim text.