Method to connect a magnetic device to a CMOS transistor

A method of fabricating a magnetic random access memory device comprising:

• providing a metal contact to a CMOS landing pad in a substrate and covering said metal contact with a dielectric layer;
• opening a via in said dielectric layer thereby exposing said metal contact;
• depositing a metal film conformally within said opening;
• depositing a filling layer over said metal film;
• polishing said filling layer and said metal film, leaving said metal film only within said opening and leaving said filling layer overlying said metal film at the bottom of said opening filling all space within sidewalls of said metal film within said opening thereby forming a metal ring contact having said filling layer in a center of said metal ring;
• providing a magnetic tunnel junction (MTJ) structure over said metal ring contact wherein said MTJ structure electrically contacts said metal ring contact;
• and
• forming a bit line over said MTJ.

A spin-torque-transfer magnetic random access memory device comprising:

• a metal contact to a CMOS landing pad in a substrate;
• a metal ring contact on said metal contact wherein a filling layer is formed in a center of said metal ring and wherein a bottom of said metal ring contact underlying said filling layer is metal;
• and
• a magnetic tunnel junction over said CMOS landing pad and connected to said CMOS landing pad by said metal ring contact.