Method for manufacturing magnetic memory chip device
AssigneeRenesas Electronics Corporation
InventorsKazuyuki Misumi, Masahiro Shimizu, Tsuyoshi Koga, Tatsuhiko Akiyama, Tomohiro Murakami
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Abstract
A method for manufacturing a magnetic memory chip device comprises the steps of: writing information in each of a plurality of magnetic memory chips formed on a silicon wafer; adhering a high magnetic permeability plate on a back face of the silicon wafer after writing information, the high magnetic permeability plate having a higher magnetic permeability than silicon and having a thickness of 50 um or more; dicing the silicon wafer into respective magnetic memory chips after adhering the high magnetic permeability plate.
Claims5
A method of manufacturing a semiconductor device comprising the steps of:
- preparing a silicon wafer having a plurality of magnetic memory chips, the silicon wafer having a predetermined thickness;
- writing information in each of the plurality of magnetic memory chips of the silicon wafer;
- after the step of writing information, back-grinding the silicon wafer to reduce the predetermined thickness of the silicon wafer;
- after the step of back-grinding, dicing the silicon wafer into respective magnetic memory chips each having the reduced thickness by the back-grinding;
- after the step of dicing, mounting one of the respective magnetic memory chips on a substrate through a high magnetic permeability plate, the high magnetic permeability plate having a higher magnetic permeability than silicon and being disposed between a back surface of the one of the respective magnetic memory chips and the substrate.
Dependencies are inferred from the claim text.