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US 8,524,439 B2Granted
Silsesquioxane resin systems with base additives bearing electron-attracting functionalities
AssigneesDow Corning Corporation, Tokyo Ohka Kogyo Co., Ltd.
InventorsSanlin Hu, Eric Scott Moyer
Life of this patent
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Abstract
A silsesquioxane-based composition that contains (a) silsesquioxane resins that contain HSiO3/2 units and RSiO3/2 units wherein; R is an acid dissociable group, and (b) 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.
Claims24
A composition comprising:
- (I) a silsesquioxane resin comprising HSiO3/2 units and RSiO3/2 units where R is an acid dissociable group having the formula
- wherein each R3 is independently a linking group;
- R4 is a second linking group;
- L is selected from the group consisting of linear or branched alkylene groups having 1 to 10 carbon atoms, fluoroalkylene groups having 2 to 20 carbon atoms, substituted and unsubstituted arylene groups, substituted and unsubstituted cycloalkylene groups, and substituted and unsubstituted alkarylene groups;
- R5 is hydrogen, linear or branched alkyl or fluoroalkyl;
- R6 is alkyl or fluoroalkyl;
- Z is an acid-cleavable group;
- f may have a value of 0 or 1;
- g may have the value of 0 or 1;
- h may have the value of 0 or 1;
- and
- (II) 7-diethylamino-4-methylcoumarin, wherein 7-diethylamino-4-methylcoumarin is present in a positive amount less of than 20% (calculated based on the weight of the composition without any acid generator) of the solids included in the composition.
9 more elements
Dependencies are inferred from the claim text.