Etch resist solution, method of fabricating thin film pattern using the same and method of fabricating an LCD device using the same

A method of fabricating a thin film pattern, comprising:

• injecting an etch resist solution into a blanket on a printing roller, wherein the etch resist solution includes a surfactant, a dye of bis(4-N-N-dimethylamino-phenyl)-(2-fluorophenyl)acetonitrile, a carrier solvent and a printing solvent that satisfies the condition 6>δsolvent or δsolvent>11, where δsolvent is the solubility parameter of the solvent, or satisfies the condition 6¢δsolvent<11 and μ<2(D), where μ is the dipole moment of the solvent;
• rotating the printing roller to uniformly coat the etch resist solution on the blanket;
• rolling the printing roller coated with the etch resist solution onto a printing plate to pattern the etch resist solution to thereby form an etch resist pattern;
• transferring the etch resist pattern from the printing roller to a substrate;
• hardening the etch resist pattern;
• and
• forming a desired thin film pattern on the substrate using the etch resist pattern,
• wherein the printing solvent includes propylene carbonate,
• wherein the carrier solvent includes butanol,
• wherein the surfactant includes at least one of palmitic acid, oleic acid, or a sulfonate based material such as dioctyl(2-ethylhexyl)sulfosuccinate, FOS 100 (CF3(CF2)4(CH2CH20)10) or FSN-100 (CF3(CF2)5(CH2CH20)14);
• and
• wherein the etch resist solution includes a base polymer having a content in the range of about 3 to about 30 wt %, the printing solvent having a content in the range of about 10 to about 50 vol %, a carrier solvent having a content in the range of about 50 to about 90 vol %, and a surfactant having a content in the range of about 0.01 to 3 wt %.

A method of fabricating a LCD device, comprising:

• preparing a thin film transistor substrate including:
• injecting an etch resist solution into a blanket on a printing roller, wherein the etch resist solution includes a surfactant, a dye of bis(4-N-N-dimethylamino-phenyl)-(2-fluorophenyl)acetonitrile, a carrier solvent and a printing solvent that satisfies the condition 6>δsolvent or δsolvent>11, where δsolvent is the solubility parameter of the solvent, or satisfies the condition 6<δsolvent<11 and μ<2(D), where μ is the dipole moment of the solvent;
• rotating the printing roller to uniformly coat the etch resist solution on the blanket;
• rolling the printing roller coated with the etch resist solution onto a printing plate to pattern the etch resist solution to thereby form an etch resist pattern;
• transferring the etch resist pattern from the printing roller to a substrate;
• hardening the etch resist pattern;
• and
• forming a desired thin film pattern on the substrate using the etch resist pattern;
• preparing a color filter substrate;
• providing a liquid crystal layer between the thin film transistor substrate and color filter substrate;
• and
• bonding the thin film transistor substrate and color filter substrate,
• wherein the printing solvent includes propylene carbonate,
• wherein the carrier solvent includes butanol,
• wherein the surfactant includes at least one of palmitic acid, oleic acid, or a sulfonate based material such as dioctyl(2-ethylhexyl)sulfosuccinate, FOS 100 (CF3(CF2)4(CH2CH20)10) or FSN-100 (CF3(CF2)5(CH2CH20)14);
• wherein the etch resist solution includes a base polymer having a content in the range of about 3 to about 30 wt %, the printing solvent having a content in the range of about 10 to about 50 vol %, a carrier solvent having a content in the range of about 50 to about 90 vol %, and a surfactant having a content in the range of about 0.01 to 3 wt %.