Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device
AssigneeHoya Corporation
InventorsOsamu Nozawa, Hiroaki Shishido, Toshiyuki Suzuki
Life of this patent
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Abstract
In a mask blank for manufacturing a transfer mask, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film. The highly oxidized layer is placed on a side opposite to a transparent substrate side.
Claims25
A mask blank for manufacturing a transfer mask, the mask blank having a light-shielding film on a transparent substrate,
- wherein the light-shielding film:
- (a) is made of a material containing tantalum as a main metal component,
- (b) has a highly oxidized layer formed as a surface layer of the light-shielding film, that is placed on a side opposite to a transparent substrate side, and
- (c) the highly oxidized layer has a Ta 4f narrow spectrum, when the highly oxidized layer is analyzed by X-ray photoelectron spectroscopy, and has a maximum peak at a binding energy of more than 23 eV.
A transfer mask having a light-shielding film pattern on a transparent substrate,
- wherein the light-shielding film pattern is made of a material containing tantalum as a main metal component,
- wherein a highly oxidized layer is formed as a surface layer of the light-shielding film pattern, that is placed on a side opposite to a transparent substrate side and as a surface layer of a sidewall of the light-shielding film pattern, and
- wherein the highly oxidized layer has a Ta 4f narrow spectrum, when the highly oxidized layer is analyzed by X-ray photoelectron spectroscopy, and has a maximum peak at a binding energy of more than 23 eV.
Dependencies are inferred from the claim text.