Oxide substrate and manufacturing method therefor
AssigneeFuji Electric Co., Ltd.
InventorYasushi Ogimoto
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Abstract
Some aspects of the invention provide an oxide substrate having a flat surface at the atomic layer level, and suited to forming a thin film of a perovskite manganese oxide. One aspect of the invention provides a single-crystal oxide substrate 10 having a single-crystal supporting substrate 1 of (210)-oriented SrTiO3 and a single-crystal underlayer 2 of (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7, which is LSAT, formed on the (210) plane surface of the supporting substrate. In another aspect of the present invention, the LSAT underlayer 2A is formed in an amorphous state. Other aspects of the invention are also disclosed.
Claims8
An oxide substrate comprising:
- a single-crystal supporting substrate of (210)-oriented SrTiO3;
- and
- an underlayer of (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7, which is LSAT, formed on the (210) plane surface of the supporting substrate.
A method for manufacturing an oxide substrate, comprising:
- a step of preparing a single-crystal supporting substrate of (210)-oriented SrTiO3;
- and
- a step of forming an underlayer of (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 , which is LSAT, on the (210) plane surface of the supporting substrate.
Dependencies are inferred from the claim text.