Doped pnictogen chalcogenide nanoplates, methods of making, and assemblies and films thereof
AssigneeRensselaer Polytechnic Institute
InventorsGanpati Ramanath, Theodorian Borca-Tasciuc, Rutvik Mehta
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Abstract
Embodiments of the invention are directed to doped pnictogen chalcogenide nanoplates, where each nanoplate comprises a rhombohedral crystal of Bi2Te3, Bi2Se3, or Sb2Te3 that is sulfur doped. Another embodiment of the invention is directed to a microwave activated method of preparation of the doped pnictogen chalcogenide nanoplates. Other embodiments of the invention are directed to bulk assemblies or fused films of the doped pnictogen chalcogenide nanoplates and their preparation from the doped pnictogen chalcogenide nanoplates such that the bulk assembly or fused film can be employed in a thermoelectric device.
Claims26
A doped pnictogen chalcogenide nanoplate comprising a rhombohedral crystal of Bi2Te3, Bi2Se3, or Sb2Te3 that is sulfur doped with less than 10 atom percent, wherein the doped pnictogen chalcogenide nanoplates are hexagonal in shape.
Dependencies are inferred from the claim text.