Substrate processing method
AssigneeTokyo Electron Limited
InventorMasanobu Honda
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Abstract
A substrate processing method effectively suppresses non-uniformity in deposition degree on a surface of a substrate. The substrate processing method includes depositing a deposit on a sidewall of each opening of a resist pattern, which is formed on an antireflection film on an etching target film of the substrate and is provided with a plurality of openings, before etching the etching target film of the substrate. Plasma is generated in the depositing process by introducing a CHF-based gas into the processing chamber at a flow rate equal to or higher than about 1000 sccm while a pressure in the processing chamber is set to equal to or higher than about 100 mTorr.
Claims6
A substrate processing method for performing a preset process on a substrate mounted on a lower electrode by using plasma of a gas excited by applying a high frequency power between an upper electrode and the lower electrode installed to face each other in an evacuable processing chamber, the method comprising:
- depositing a deposit on a sidewall of each opening of a resist pattern, which is formed on an antireflection film on an etching target film of the substrate and is provided with a plurality of openings, before etching the etching target film of the substrate,
- wherein the depositing of the deposit comprises generating plasma by introducing a CHF-based gas into the processing chamber at a flow rate equal to or higher than about 1000 sccm while a pressure in the processing chamber is set to be equal to or higher than about 100 mTorr.
Dependencies are inferred from the claim text.