Electroless copper deposition

A method for providing electroless plating over a low-k dielectric layer, comprising:

• forming an amorphous carbon barrier layer over the low-k dielectric layer, comprising:
• providing a flow a deposition gas, comprising a hydrocarbon, H2, and a first oxygen free diluent;
• forming a plasma from the deposition gas to provide the amorphous carbon barrier layer;
• and
• stopping the flow of the deposition gas;
• conditioning the amorphous carbon barrier layer, comprising:
• providing a flow of a conditioning gas comprising H2 and a second oxygen free diluent;
• forming a plasma from the conditioning gas, which conditions a top surface of the amorphous carbon barrier layer;
• and
• stopping the flow of the conditioning gas;
• and
• functionalizing the conditioned amorphous carbon barrier layer for electroless plating, comprising:
• providing a flow of a functionalizing gas comprising NH3 or H2 and N2;
• forming a plasma from the functionalizing gas;
• and
• stopping the flow of the functionalizing gas.