Complex oxide film and method for producing same, dielectric material including complex oxide film, piezoelectric material, capacitor, piezoelectric element, and electronic device
AssigneeShowa Denko K.K.
InventorsAkihiko Shirakawa, Hirofumi Fukunaga, Chunfu Yu
Life of this patent
Estimating the term…
Abstract
The invention relates to a method for a complex oxide film having a high relative dielectric constant formed on a substrate surface by wet-treatment method and a production process of the complex oxide film comprising a step of washing the complex oxide film with an acid solution of pH 5 or less to thereby reduce salts in the film. Further, the invention relates to a dielectric material and a piezoelectric material containing the complex oxide film, a capacitor and a piezoelectric element including the material, and a electronic device comprising the element.
Claims8
A method for producing a complex oxide film, comprising a first step of forming a metal oxide film containing a first metal element formed on a substrate surface, followed by washing with water and drying, a second step of allowing a solution containing a second metal ion to react with the metal oxide film containing the first metal element to form the complex oxide film containing the first and second metal elements and a step of washing the complex oxide film with an acid solution of pH 5 or less, and
- wherein the metal oxide film is formed by anode oxidation of the substrate, the anode oxidation is conducted at a temperature within a range of 0 to 90° C., the solution containing a second metal ion is allowed to react with the metal oxide film in a temperature range from 40 ° C. to the boiling point of the solution, and the first and second steps are performed at atmospheric pressure.
Dependencies are inferred from the claim text.