Sputtering target, transparent conductive film and transparent electrode
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKoki Yano, Kazuyoshi Inoue, Nobuo Tanaka, Akira Kaijo, Satoshi Umeno
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Abstract
A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn2SnO4 and a bixbyite structure compound of In2O3. A sputtering target includes indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by X-ray diffraction (XRD).
Claims15
A sputtering target, comprising a sintered body of an oxide comprising at least indium, tin, and zinc and comprising a spinel structure compound of Zn2SnO4 and a bixbyite structure compound of In2O3,
- wherein, in an X-ray diffraction (XRD),
- a hexagonal layered compound of In2O3(ZnO)m, wherein m is an integer of 2 to 20, has a maximum peak intensity (I/In2O3(ZnO)m),
- a spinel structure compound of Zn2SnO4 has a maximum peak intensity (I(Zn2SnO4)), and
- a bixbyite structure compound of In2O3 has a maximum peak intensity (I(In2O3)),
- wherein the maximum peak intensity of the hexagonal layered compound of In2O3(ZnO)m,
- wherein m is an integer of 2 to 20, (I/In2O3(ZnO)m), the maximum peak intensity of the spinel structure compound of Zn2SnO4 (I(Zn2SnO4)), and the maximum peak intensity of the bixbyite structure compound of In2O3 (I(In2O3)) have the following relationship:
- I(In2O3(ZnO)m)<I(Zn2SnO4)
- I(In2O3(ZnO)m)<I(In2O3)
- I(In2O3(ZnO)m)<Max.(I(Zn2SnO4), I(In2O3))÷10
- wherein Max. (X,Y) indicates the larger of either X or Y.
The sputtering target comprising indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by an X-ray diffraction (XRD), wherein the atomic ratio of In/(In+Sn+Zn) is in a range larger than 0.6 and smaller than 0.75, and the atomic ratio of Sn/(In+Sn+Zn) is in a range of 0.11 to 0.23.
Dependencies are inferred from the claim text.