Method and apparatus for manufacturing semiconductor device, and storage medium

A non-transitory storage medium storing a computer program for causing a computer to execute operations in accordance with a method for manufacturing a semiconductor device, the method comprising the steps of:

• preparing a substrate having an interlayer insulating film formed thereon;
• forming an upper layer film having a mask pattern on an upper surface of the interlayer insulating film present on the substrate in such a manner that a portion of the upper surface of the interlayer insulating film is exposed to an atmosphere;
• supplying a gas required for dehydration to the substrate to remove moisture from the interlayer insulating film with the portion of the upper surface of the interlayer insulating film exposed to the atmosphere;
• and
• etching a portion of the interlayer insulating film to form a connection hole in which an electrical connection portion is to be embedded, wherein
• the gas required for dehydration releases a proton (H+) which couples with a hydroxyl group contained in the interlayer insulating film to desorb water vapor from the interlayer insulating film, wherein
• the gas required for dehydration is dipivaloylmethane (DPM), and
• the film, after treatment, has an increased measured contact angle with water or a lower measured amount of moisture remaining in the film.

A plasma etching method, comprising the steps of:

• preparing a substrate in a process chamber, the substrate having an interlayer insulating film formed thereon in such a manner that a portion of the upper surface of the interlayer insulating film is exposed;
• heating the substrate;
• supplying a gas required for dehydration to the substrate in the process chamber;
• removing moisture from the interlayer insulating film by supplying the gas required for dehydration;
• and
• etching a portion of the interlayer insulating film, wherein
• the gas required for dehydration releases a proton (H+) which couples with a hydroxyl group contained in the interlayer insulating film to desorb water vapor from the interlayer insulating film,
• the gas required for dehydration is dipivaloylmethane (DPM), and
• the film, after treatment, has an increased measured contact angle with water or a lower measured amount of moisture remaining in the film.