Technique for the growth of planar semi-polar gallium nitride
AssigneesThe Regents of the University of California, Japan Science and Technology Agency
InventorsTroy J. Baker, Benjamin A. Haskell, Paul T. Fini, Steven P. DenBaars, James S. Speck, Shuji Nakamua
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Abstract
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {1011} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {1013} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {1122} gallium nitride (GaN) grown on a {1100} sapphire substrate, and (4) {1013} gallium nitride (GaN) grown on a {1100} sapphire substrate.
Claims26
A device, comprising:
- a semi-polar III-nitride layer, wherein:
- the semi-polar oriented III-nitride layer has a surface area of at least 10 mm by 10 mm,
- the surface area has a semi-polar orientation, and
- the semi-polar III-nitride layer has a crystal quality suitable for subsequent growth of a semi-polar device layer structure on the surface area.
A method of fabricating a device, comprising:
- growing a semi-polar III-nitride layer, wherein:
- the semi-polar oriented III-nitride layer has a surface area of at least 10 mm by 10 mm,
- the surface area has a semi-polar orientation, and
- the semi-polar III-nitride layer is suitable for subsequent growth of a semi-polar device layer structure on the surface area.
A device structure, comprising:
- a semi-polar III-nitride layer, wherein:
- the semi-polar oriented III-nitride layer has a surface area of at least 10 mm by 10 mm,
- the surface area has a semi-polar orientation, and
- a III-nitride light emitting diode (LED) structure deposited on the surface area.
Dependencies are inferred from the claim text.