Heat-transfer structure and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsMasaaki Miyagawa, Tetsuji Sato
Life of this patent
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Abstract
A heat-transfer structure which can keep a consumable component at a temperature of 225° C. or less during etching of a substrate. The heat-transfer structure is disposed in a chamber where plasma processing is performed on a wafer as the substrate under a reduced pressure. The heat-transfer structure is comprised of a focus ring having an exposed surface exposed to plasma, a susceptor and an electrostatic chuck that cool the consumable component, and a heat-transfer sheet interposed between the focus ring and the electrostatic chuck and made of a gel-like material. The ratio of hardness of the heat-transfer sheet expressed in Asker C to thermal conductivity of the heat-transfer sheet expressed in W/m·K is less than 20.
Claims10
A heat-transfer structure disposed in a processing chamber in which plasma processing is performed on a substrate under a reduced pressure, the structure comprising:
- an electrostatic chuck
- a consumable component including an exposed surface exposed to plasma;
- said consumable component includes an annular focus ring disposed to enclose an outer peripheral edge of the substrate;
- a cooling component that cools said consumable component;
- and
- a heat-transfer member interposed between said focus ring and said electrostatic chuck and made of a gel-like material,
- wherein a ratio of a hardness of said heat-transfer member expressed in Asker C to a thermal conductivity of said heat-transfer member expressed in W/m·K is less than 20,
- wherein a hardness of said heat-transfer member expressed in Asker C is 10 to 100, and
- wherein a surface roughness of a contact surface of said focus ring is 6.3 μm or greater in Ra, the contact surface contacting said heat-transfer member.
A substrate processing apparatus, comprising:
- a processing chamber in which plasma processing is performed on a substrate under a reduced pressure, an electrostatic chuck and
- a heat-transfer structure disposed in the processing chamber, wherein
- said heat-transfer structure includes a consumable component including an exposed surface exposed to plasma, said consumable component includes an annular focus ring disposed to enclose an outer peripheral edge of the substrate, a cooling component that cools the consumable component, and a heat-transfer member interposed between the focus ring and the electrostatic chuck and made of a gel-like material, and
- a ratio of a hardness of the heat-transfer member expressed in Asker C to a thermal conductivity of the heat-transfer member expressed in W/m·K is less than 20,
- wherein a hardness of the heat-transfer member expressed in Asker C is 10 to 100, and
- wherein a surface roughness of a contact surface of said focus ring is 6.3 μm or greater in Ra, the contact surface contacting said heat-transfer member.
Dependencies are inferred from the claim text.