Silicon wafer and method for producing the same

A method for producing a silicon single crystal wafer comprising

• a plurality of voids, wherein 50% or more of the total number of voids are bubble-like shaped aggregates of voids;
• a V1 region having a void density of over 2×104/cm3 and below 1×105/cm3 which occupies less than or equal to 20% of the total area of the silicon wafer;
• a V2 region having a void density of 5×102 to 2×104/cm3 which occupies 80% or more of the total area of the silicon wafer;
• and
• a bulk micro defect density which is 5×108/cm3 or more, and wherein the silicon single crystal wafer is doped with nitrogen, hydrogen and carbon;
• the method comprising:
• pulling a silicon single crystal in a pulling furnace with a crystal pulling speed and doping the silicon single crystal with nitrogen, carbon and hydrogen;
• controlling the nitrogen concentration in the silicon crystal to 3×1013 to 3×1015 atoms/cm2;
• controlling carbon concentration in the silicon crystal to 1×1015 to 9×1015 atoms/cm3;
• controlling a partial pressure of hydrogen in the crystal pulling furnace to 3 to 60 Pa;
• controlling a temperature gradient in a longitudinal direction of the silicon single crystal within a temperature range of 1100 to 1200° C. to 3.5° C./mm or more;
• controlling the crystal pulling speed to less than or equal to an upper limit value and greater than or equal to a lower limit value;
• and
• cutting a silicon wafer from the silicon single crystal,
• wherein the silicon wafer comprises a V1 region having a void density of over 2×104/cm3 and below 1×105/cm3 which occupies 20% of the total area of said silicon wafer if the single crystal was pulled with the upper limit value of the crystal pulling speed, and comprises a V2 region having a void density of 5×102 to 2×104/cm3 which occupies 80% of the total area of said silicon wafer if the single crystal was pulled with the lower limit value of the crystal pulling speed.