Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
AssigneeE. I. Du Pont de Nemours and Company
InventorKenneth Warren Hang
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Abstract
The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The present invention is also directed to the bismuth-tellurium oxide that is a component of thick film pastes.
Claims7
A bismuth-tellurium-oxide composition consisting of:
- 22-42 wt % Bi2O358-78 wt % TeO2, 0.1-7 wt % Li2O and 0.1-4 wt % TiO2, based on the total weight of said bismuth-tellurium oxide.
A bismuth-tellurium-oxide composition consisting of:
- 22-42 wt % Bi2O3, 58-78 wt % TeO2, 0.1-7 wt % Li2O, 0.1-4 wt % TiO2, 0.1-8 wt % B2O3, 0.1-3 wt % ZnO and 0.3-2 wt % P2O5, based on the total weight of said bismuth-tellurium oxide.
A bismuth-tellurium-oxide composition consisting of:
- 22-42 wt % Bi2O3, 58-78 wt % TeO2, 0.1-4 wt % TiO2, 0.1-8 wt % B2O3, 0.1-3wt % ZnO, 0.3-2 wt % P2O5, and 0.1-7 wt % of one or more oxides selected from the group consisting of Li2O, Na2O, K2O, Cs2O and Rb2O, based on the total weight of said bismuth-tellurium oxide.
Dependencies are inferred from the claim text.