Data reading method, memory storage apparatus and memory controller thereof

A memory controller for controlling a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module has a plurality of physical pages, the memory controller comprising:

• a memory management circuit, configured to group the physical pages into a plurality of physical page groups and respectively set a plurality of threshold voltage sets for the physical page groups, wherein a first threshold voltage set among the threshold voltage sets corresponds to a first physical page group among the physical page groups and the first threshold voltage set includes a plurality of threshold voltages;
• a host interface, coupled to the memory management circuit;
• a memory interface, coupled to the memory management circuit and configured for coupling to the rewritable non-volatile memory module;
• an error checking and correcting circuit, coupled to the memory management circuit;
• and
• a compensation voltage calculating circuit, coupled to the memory management circuit,
• wherein the memory management circuit applies the first threshold voltage set to read first data from a first physical page belonging to the first physical page group,
• wherein when the error checking and correcting circuit successfully corrects the first data to generate corrected data and an error bit number corresponding to the first data is not smaller than an error bit threshold, the compensation voltage calculating circuit calculates a plurality of compensation voltages corresponding to the threshold voltages of the first threshold voltage set.

A memory storage apparatus, comprising:

• a connector, configured to couple to a host system;
• a rewritable non-volatile memory module, having a plurality of physical pages;
• and
• a memory controller, coupled to the connector and the rewritable non-volatile memory module, wherein the memory controller has an error checking and correcting circuit,
• wherein the memory controller is configured to group the physical pages into a plurality of physical page groups and respectively set a plurality of threshold voltage sets for the physical page groups, wherein a first threshold voltage set among the threshold voltage sets corresponds to a first physical page group among the physical page groups and the first threshold voltage set includes a plurality of threshold voltages,
• wherein the memory controller applies the first threshold voltage set to read first data from a first physical page belonging to the first physical page group,
• wherein when the error checking and correcting circuit successfully corrects the first data to generate corrected data and an error bit number corresponding to the first data is not smaller than an error bit threshold, the memory controller calculates a plurality of compensation voltages corresponding to the threshold voltages of the first threshold voltage set.

A data reading method for reading data from a first physical page of a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module has a plurality of physical pages, the physical pages are grouped into a plurality of physical page groups, the first physical page. belongs to a first physical page group among the physical page groups, a first threshold voltage set and a first threshold voltage flag are set for the first physical page group, the first threshold voltage set includes a plurality of threshold voltages and the first threshold voltage flag is marked initially as a disabled status, the data reading method comprising:

• determining whether the first threshold voltage flag is marked as an enabled status;
• when the first threshold voltage flag is not marked as the enabled status, applying the first threshold voltage set to read first data from the first physical page and determining whether the first data read from the first physical page is corrected to generate corrected data by an error checking and correcting circuit;
• when the first data is corrected to generate the corrected data by the error checking and correcting circuit, determining whether an error bit number corresponding to the first data is smaller than an error bit threshold;
• and
• when the error bit number corresponding to the first data is not smaller than the error bit threshold, calculating a plurality of compensation voltages corresponding to the threshold voltages of the first threshold voltage set and marking the first threshold voltage flag as the enabled status.