Dynamic read channel calibration for non-volatile memory devices

An article of manufacture comprising a non-transitory machine-readable storage medium that provides instructions that, if executed by the machine, will cause the machine to perform operations comprising:

• tracking a number of successful reads performed on a memory device, wherein a successful read on the memory device comprises:
• reading data from a plurality of flash memory cells included in a memory device using a first read reference voltage level;
• and
• performing an error checking and correction (ECC) algorithm on the data to identify no errors or errors in the data that are correctable via the ECC algorithm;
• and
• in response to the number of successful reads performed on the memory device exceeding a threshold value comprising a specific number of performed reads, retrieving a stored value to adjust the first read reference voltage level to a second read reference voltage level, wherein the stored value is included in a look-up table (LUT).

A system comprising:

• a flash memory device;
• and
• a flash memory controller to
• track a number of successful reads performed on a memory device, wherein a successful read on the memory device comprises:
• read data from a plurality of flash memory cells included in a memory device using a first read reference voltage level;
• and
• perform an error checking and correction (ECC) algorithm on the data to identify no errors or errors in the data that are correctable via the ECC algorithm;
• and
• in response to the number of successful reads performed on the memory device exceeding a threshold value comprising a specific number of performed reads, retrieve a stored value to adjust the first read reference voltage level to a second read reference voltage level, wherein the stored value is included in a look-up table (LUT).