Control method of non-volatile semiconductor device

A method comprising:

• temporarily storing write-data that are to be written into a plurality of non-volatile memory cells, respectively, the non-volatile memory cells being divided into a plurality of cell groups each comprising at least one non-volatile memory cell;
• performing a first operation, the first operation comprising a plurality of first write-phases that are carried out in series, each of the first write-phases being carried out on an associated one of the cell groups and comprising,
• applying a first write-voltage to the nonvolatile memory cell or cells belonging to the associated one of the cell groups in response to associated one or ones of the write-data that are to be written into the nonvolatile memory cell or cells belonging to the associated one of the cell groups;
• and
• performing a second operation after the first operation is completed, the second operation comprising a plurality of first read-phases that are carried out in series, each of the first read-phases being carried out on an associated one of the cell groups and comprising:
• applying a first read-voltage to the nonvolatile memory cell or cells belonging to the associated one of the cell groups to produce first read-data therefrom;
• and
• comparing the first read-data with the associated one or ones of the write-data that are to be written into the nonvolatile memory cell or cells belonging to the associated one of the cell groups to produce first comparison result data.