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US 8,509,278 B2Granted
Light emitting device and optical apparatus using the same
AssigneeSony Corporation
InventorsKazunari Saito, Noriyuki Banno, Kota Tokuda
Life of this patent
Estimating the term…
Abstract
A light emitting device includes: a support base; a first light emitting element which is provided at one surface side of the support base and has a first substrate; and a second light emitting element which is provided between the first light emitting element and the support base and has a second substrate, which has a light emitting section as a semiconductor layer and a peripheral section other than the light emitting section at the first light emitting element side of the second substrate, and which has an embedded layer formed of a material with higher heat conductivity than the semiconductor layer in the peripheral section.
Claims23
A light emitting device comprising:
- a contact layer of a first light emitting element electrically connected to an electrically-conductive welding layer, said welding layer being between said first light emitting element and an electrically-conductive embedded layer;
- a contact layer of a second light emitting element electrically connected to said embedded layer, said embedded layer being between said second light emitting element and said welding layer,
- wherein said welding layer is electrically isolated from said embedded layer,
- wherein a semiconductor layer in the first light emitting element contains at least one of Group 3B elements and at least nitrogen (N) of group 5B elements.
1 more element
A light emitting device comprising:
- a contact layer of a first light emitting element electrically connected to an electrically conductive welding layer, said welding a layer being between said first light emitting element and an electrically-conductive embedded layer;
- a contact layer of a second light emitting element electrically connected to said embedded layer, said embedded layer being between said second light emitting element and said welding layer,
- a first laser oscillating section on a substrate of the second light emitting element, said first laser oscillating section being configured to emit a first wavelength of light,
- wherein said welding layer is electrically isolated from said embedded layer,
- wherein said substrate of the second light emitting element is formed of gallium arsenide (GaAs).
2 more elements
A light emitting device comprising:
- a contact layer of a first light emitting element electrically connected to an electrically-conductive welding layer, said welding layer being between said first light emitting element and an electrically-conductive embedded layer;
- a contact layer of a second light emitting element electrically connected to said embedded layer, said embedded layer being between said second light emitting element and said welding layer,
- a first laser oscillating section on a substrate of the second light emitting element, said first laser oscillating section being configured to emit a first wavelength of light,
- wherein said welding layer is electrically isolated from said embedded layer,
- wherein said substrate of the first light emitting element is formed of nitride-based Group III-V compound semiconductor containing at least one of Group 3B elements and at least nitrogen (N) of Group 5B elements.
2 more elements
A light emitting device comprising:
- a contact layer of a first light emitting element electrically connected to an electrically-conductive welding layer, said welding layer being between said first light emitting element and an electrically-conductive embedded layer;
- a contact layer of a second light emitting element electrically connected to said embedded layer, said embedded layer being between said second light emitting element and said welding layer,
- a first laser oscillating section on a substrate of the second light emitting element, said first laser oscillating section being configured to emit a first wavelength of light;
- a second laser oscillating section on said substrate of the second light emitting element, said second laser oscillating section being configured to emit a second wavelength of the light,
- wherein said welding layer is electrically isolated from said embedded layer,
- and wherein a semiconductor layer in the first light emitting element contains at least one of Group 3B elements and at least nitrogen (N) of group 5B elements.
3 more elements
A light emitting device comprising:
- a contact layer of a first light emitting element electrically connected to an electrically-conductive welding layer, said welding layer being between said first light emitting element and an electrically-conductive embedded layer;
- a contact layer of a second light emitting element electrically connected to said embedded layer, said embedded layer being between said second light emitting element and said welding layer,
- wherein said welding layer is electrically isolated from said embedded layer,
- wherein a heat conductivity of the embedded layer is higher than a heat conductivity of a semiconductor layer in the second light emitting element.
1 more element
Dependencies are inferred from the claim text.