Light emitting and lasing semiconductor methods and devices

A two terminal light-emitting semiconductor device for producing light emission in response to electrical signals, comprising:

• a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on said drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of said base region and comprising an emitter mesa that includes at least one emitter layer and having a substantially rectilinear surface portion;
• said base region containing at least one region exhibiting quantum size effects;
• and
• a base/drain electrode having a flange portion contacting an exposed surface of said base region and a further portion contacting said drain region, and an emitter electrode on the surface of said emitter region, said electrical signals being applied with respect to said base/drain and emitter electrodes to cause light emission from said base region;
• said base/drain and emitter electrodes being configured to obtain substantial uniformity of voltage distribution in the region between said electrodes, including said emitter electrode being disposed along one side of said surface portion of the emitter mesa and said flange portion of said base/drain electrode being disposed on a portion of the base region surface adjacent the opposite side of said emitter mesa surface portion, and said emitter electrode and the flange portion of said base/drain electrode comprising opposing linear conductive strips, and said opposing linear conductive strips having different lengths, so that the surface of said emitter mesa between said strips is trapezoidal.