Voltage generation circuit and nonvolatile memory device including the same

A nonvolatile memory device, comprising:

• a memory cell array configured to comprise memory blocks comprising memory cells coupled to bit lines and word lines and configured to store data;
• page buffers each coupled to one or more of the bit lines and configured to store data to be programmed into a selected memory cell or to read data programmed into the selected memory cell and store the read data;
• and
• a voltage generation circuit configured to, when data are read from one or more memory blocks selected from among the memory blocks, change a level of a read voltage in response to a voltage of a global source line to which the selected memory blocks are coupled and output the read voltage having a changed level,
• wherein the voltage generation circuit comprises:
• a first voltage output unit configured to output a first voltage using a first reference voltage;
• a bouncing compensation unit configured to change the first voltage using a control signal, the first voltage, and the voltage of the global source line, and to output the changed first voltage as a second voltage;
• a second reference voltage generation unit configured to generate a second reference voltage;
• and
• an amplification unit configured to amplify a difference between the second voltage and the second reference voltage according to a set resistance ratio, and to output a result of the amplification as the read voltage.

A voltage generation circuit, comprising:

• a first voltage generation unit configured to generate a first voltage;
• a bouncing compensation unit configured to control the first voltage in response to a control signal and a voltage of a global source line when a read operation is performed on a nonvolatile memory device;
• an amplification unit configured to amplify a difference between a reference voltage and an output voltage of the bouncing compensation unit according to a set resistance ratio and to generate a second voltage for a read operation of the nonvolatile memory device;
• and
• a control unit configured to generate the control signal to control a degree in which the first voltage changes,
• wherein the first voltage generation unit comprises:
• a first reference voltage output unit configured to output a first reference voltage using a bandgap voltage;
• and
• a temperature compensation unit configured to change the first reference voltage according to temperature to obtain the first voltage, and output the first voltage.