Internal voltage generator of semiconductor memory device
AssigneeSK hynix Inc.
InventorJae Ho Lee
Life of this patent
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Abstract
An internal voltage generator of a semiconductor memory device includes a proportional to absolute temperature (PTAT) current generator configured to generate a PTAT current having a varying current in proportion to a temperature change, a current control circuit configured to generate an internal current identical with the PTAT current and generate an internal voltage based on the internal current, and an offset circuit configured to control the internal voltage to a set voltage level.
Claims24
An internal voltage generator of a semiconductor memory device, comprising:
- a proportional to absolute temperature (PTAT) current generator configured to generate a PTAT current having a varying current in proportion to a temperature change;
- a current control circuit configured to generate an internal current identical with the PTAT current and generate an internal voltage based on the internal current;
- and
- an offset circuit configured to control the internal voltage to a set voltage level.
An internal voltage generator of a semiconductor memory device, comprising:
- a proportional to absolute temperature (PTAT) current generator configured to generate a PTAT current having a varying current in proportion to a temperature change;
- a complementary to absolute temperature (CTAT) current generator configured to generate a CTAT current having a vary current in inverse proportion to a temperature change;
- a selector configured to select one of the PTAT current and the CTAT current in response to a control signal;
- a current control circuit configured to generate an internal current by copying the PTAT current or the CTAT current selected by the selector and generate an internal voltage by supplying the internal current to a resistor of an output terminal;
- and
- an offset circuit configured to control the internal voltage by controlling an offset voltage of the output terminal according to the copied current.
An internal voltage generator of a semiconductor memory device, comprising:
- a complementary to absolute temperature (CTAT) current generator configured to generate a CTAT current having a vary current in inverse proportion to a temperature change;
- a temperature compensation voltage generator configured to generate an internal current by copying the CTAT current and generate a varying temperature compensation voltage having the temperature change by supplying the internal current to a resistor of an output terminal;
- a voltage controller configured to output the temperature compensation voltage as a first output voltage and a step voltage as a second output voltage or output the temperature compensation voltage as the second output voltage and the step voltage as the first output voltage;
- and
- an internal voltage generator configured to generate an internal voltage having a CTAT current characteristic or a PTAT characteristic according to potentials of the first output voltage and the second output voltage.
Dependencies are inferred from the claim text.