Read architecture for MRAM

A method of reading a random access memory (RAM) cell, wherein the RAM cell is programmable to a high resistance state and a low resistance state comprising the steps of:

• performing a first read of the RAM cell at each of a plurality of different sense thresholds to provide a first set of sense outputs;
• writing the RAM cell to the low resistance state;
• performing a second read of the RAM cell at each of the plurality of different sense thresholds to provide a second set of sense outputs;
• comparing the first set of sense outputs and second set of sense outputs;
• and
• providing a data output for the RAM cell based on the comparing step.

A non-destructive method of reading a magnetoresistive random access memory (MRAM) cell, wherein the MRAM cell is programmable to a high resistance state and a low resistance state, comprising the steps of:

• providing a first stimulus to the MRAM cell to produce a first bit line electric quantity;
• deriving a reference quantity from the first bit line electric quantity;
• providing a plurality of additional stimuli to the MRAM cell in sequence to produce a corresponding plurality of bit line electric quantities;
• comparing the reference quantity with the plurality of bit line electric quantities in sequence to produce a corresponding plurality of output values representing a result of the comparison;
• and
• examining the plurality of output values and outputting a sense output representing a determination of a programmed state of the MRAM cell.