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US 8,508,996 B2Granted
Method of programming non-volatile memory device and non-volatile memory device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMoosung Kim, Ohsuk Kwon
Life of this patent
Estimating the term…
Abstract
A program method of a nonvolatile memory device according to example embodiments includes a operation (a) of detecting a level of a program voltage; and a operation (b) of providing a unselected word line voltage and a bit line precharge voltage having a variable level respectively according to the detected level of the program voltage.
Claims20
A program method of a nonvolatile memory device comprising:
- an operation of applying a level of a program voltage to a selected wordline;
- and
- an operation of controlling a level of a pass voltage and a level of a bit line precharge voltage according to the level of the program voltage, the level of the pass voltage increasing as the level of the program voltage increases,
- wherein the pass voltage is applied to an unselected word lines and the bit line precharge voltage is applied to inhibited bit lines.
1 more element
A non-volatile memory device, comprising:
- a non-volatile memory cell array including a selected word line and an unselected word line;
- a voltage generator configured to generate a plurality of program voltages for the selected word line and a plurality of pass voltages for the unselected word line;
- and
- a controller configured to
- detect a level of at least one of the plurality of program voltages, and
- control a level of at least one of the plurality of pass voltages and a level of a bit line precharge voltage according to the detected level of the at least one of the plurality of program voltages, the level of the at least one of the plurality of pass voltages increasing as the level of the at least one of the plurality of program voltages increases.
3 more elements
A memory system comprising:
- a nonvolatile memory device;
- and
- a memory controller configured to control the nonvolatile memory device to program memory cells by detecting a level of a program voltage, and controlling a pass voltage and a bit line precharge voltage according to the detected level of the program voltage, the level of the pass voltage increasing as the level of the program voltage increases.
Dependencies are inferred from the claim text.