Semiconductor memory device and method of operating the same
AssigneeSK hynix Inc.
InventorSeong Je Park
Life of this patent
Estimating the term…
Abstract
A method of operating a semiconductor memory device includes performing an LSB program operation for selected memory cells while raising a program voltage, when the threshold voltages of some of the selected memory cells reach a target level, storing data, corresponding to a relevant program voltage, in a first flag cell, performing the LSB program operation for some of the selected memory cells, having threshold voltages not reached the target level, until the threshold voltages of all the selected memory cells reach the target level, and after the LSB program operation is completed, performing an MSB program operation for the selected memory cells by using a program voltage, set based on the data stored in the first flag cell, as a start program voltage.
Claims18
A method of operating a semiconductor memory device, the method comprising:
- performing an LSB program operation for selected memory cells while raising a program voltage;
- storing data, corresponding to a program voltage, in a first flag cell when a threshold voltage of a set number of memory cell among the selected memory cells reach a target level;
- performing the LSB program operation for some of the selected memory cells, having threshold voltages not reached the target level, until the threshold voltages of all the selected memory cells reach the target level;
- and
- performing an MSB program operation for the selected memory cells by using a program voltage, set based on the data stored in the first flag cell, as a start program voltage after the LSB program operation is completed.
A method of operating a semiconductor memory device, the method comprising:
- performing an LSB program operation for an even page of a first page, wherein first data, corresponding to a program voltage when threshold voltages of some of memory cells of the even page reach a target level, is stored in a flag cell;
- when the threshold voltages of all the memory cells of the even page reach the target level, performing remaining program operations for the first page using a start program voltage set based on the first data;
- after all the program operations for the first page are completed, selecting a second page;
- performing an LSB program operation for an even page of the second page, wherein second data, corresponding to a program voltage when threshold voltages of some of memory cells of the even page reach a target level, is stored in the flag cell;
- and
- when the threshold voltages of all the memory cells of the even page of the second page reach the target level, performing remaining program operations for the second page using a start program voltage set based on the second data.
A semiconductor memory device, comprising:
- a memory cell array configured to store data;
- page buffers coupled to the memory cell array through bit lines and configured to receive program data;
- a fail bit counter configured to count the program data;
- and
- a control circuit configured to compare a set number and a result of the count and control the page buffers so that when the number of program data is smaller than the set number, the program data stored in the page buffers is inverted and a program operation is performed based on the inverted data or when the number of program data is equal to or greater than the set number, the program data stored in the page buffers is maintained and a program operation is performed based on the maintained data.
Dependencies are inferred from the claim text.