Magnetic tunnel junction with compensation element
AssigneeSeagate Technology LLC
InventorsYuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Wei Tian, Xiaobin Wang, Xiaohua Lou
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Abstract
A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.
Claims20
A magnetic tunnel junction, comprising:
- a reference element;
- a compensation element having an opposite magnetization moment to a magnetization moment of the reference element;
- a free magnetic layer between the reference element and the compensation element, the free magnetic layer having a saturation moment value being greater than 1100 emu/cc;
- an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference element;
- and
- an electrically insulating layer separating the compensation element from the free magnetic layer.
A magnetic tunnel junction, comprising:
- a reference element;
- a compensation element;
- a free magnetic layer between the reference element and the compensation element, the free magnetic layer having a saturation moment value being greater than 1100 emu/cc;
- an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference element;
- and
- an electrically insulating and electronically reflective layer having a thickness in a range from 3 to 15 Angstroms and being between the compensation element from the free magnetic layer.
A spin-transfer torque memory cell, comprising:
- a reference element;
- a compensation element having an opposite magnetization moment to a magnetization moment of the reference element;
- a free magnetic layer between the reference element and the compensation element, the free magnetic layer having a saturation moment value being greater than 1100 emu/cc;
- an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference element;
- an electrically insulating and electronically reflective layer having a thickness in a range from 3 to 15 Angstroms and being between the compensation element from the free magnetic layer;
- and
- an electrically conductive and non-ferromagnetic spacer layer disposed between the compensation element and the electrically insulating and electronically reflective layer.
Dependencies are inferred from the claim text.