Back to results
US 8,508,982 B2Granted
Semiconductor device
AssigneeElpida Memory, Inc.
InventorTakeshi Ohgami
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first memory cell, a first line, a second line and a first capacitor. The first line is coupled to the first memory cell. The first line supplies a first voltage to the first memory cell. The second line is supplied with a fixed voltage. The first capacitor is coupled between the first and second lines.
Claims19
A semiconductor device comprising:
- a first memory cell;
- a first line coupled to the first memory cell, the first line supplying a first voltage to the first memory cell;
- a second line supplied with a second voltage;
- a first capacitor coupled between the first and second lines;
- a word line;
- and
- a bit line crossing the word line and provided independently of the first line,
- wherein the first memory cell comprises
- a transistor comprising:
- a gate electrode coupled to the word line;
- a first electrode coupled to the bit line;
- and
- a second electrode;
- and
- a second capacitor coupled between the second electrode and the first line.
12 more elements
A semiconductor device comprising:
- a first memory cell;
- a first line coupled to the first memory cell, the first line supplying a first voltage to the first memory cell;
- a second line being supplied with a fixed voltage;
- a first capacitor coupled between the first and second lines;
- and
- a plurality of banks each comprising a plurality of memory cells that are coupled to the first line, each of the plurality of memory cells having the same structure as of the first memory cell.
3 more elements
A semiconductor device comprising:
- a transistor;
- a first wiring line supplied with a first voltage;
- a second wiring line supplied with a second voltage;
- a first capacitor comprising:
- a first electrode in electrical contact with the transistor;
- a second electrode in electrical contact with the first wiring line;
- and
- a first dielectric film between the first and second electrodes;
- and
- a second capacitor comprising:
- a third electrode in electrical contact with the second wiring line;
- a fourth electrode in electrical contact with the first wiring line;
- and
- a second dielectric film between the third and fourth electrodes.
11 more elements
A semiconductor device comprising:
- a plurality of first capacitors in a first region, each of the first capacitors comprising:
- a first electrode;
- a second electrode;
- and
- a first dielectric film between the first and second electrodes;
- and
- a second capacitor comprising:
- a third electrode;
- a fourth electrode;
- and
- a second dielectric film between the third and fourth electrodes, each of the third and fourth electrodes surrounding the first region, the third electrode being electrically connected in common to the first electrode of each of the first capacitors, and the fourth electrode being supplied with a reference voltage.
8 more elements
Dependencies are inferred from the claim text.