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US 8,508,981 B2Granted
Apparatus for variable resistive memory punchthrough access method
AssigneeSeagate Technology LLC
InventorsMaroun Georges Khoury, Hongyue Liu, Brian Lee, Andrew John Gjevre Carter
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Abstract
Variable resistive punchthrough access methods are described. The methods include switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the magnetic tunnel junction data cell in a first direction. The write current is provided by a transistor being electrically coupled to the variable resistive data cell and a source line. The write current passes through the transistor in punchthrough mode.
Claims20
A method comprising:
- applying a voltage across a source region and a drain region of a transistor that is sufficient to merge a source depletion region and a drain depletion region of the transistor and conduct a write current through the transistor;
- switching a variable resistive data cell from a high resistance state to a low resistance state by passing the write current through the variable resistive data cell in a first direction.
A method comprising:
- switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the variable resistive data cell in a first direction, the write current passing through the transistor in punchthrough mode.
A method comprising:
- applying a voltage across a source region and a drain region of a first transistor that is sufficient to merge a source depletion region and a drain depletion region of the first transistor and conduct a write current through the first transistor;
- activating a common transistor to allow the write current to pass through the common transistor, the common transistor electrically coupled to a source line and the first variable resistive data cell, the common transistor electrically coupled to a second variable resistive data cell.
Dependencies are inferred from the claim text.