Magnetic recording element and nonvolatile memory device

A nonvolatile memory device comprising:

• a magnetic recording element including a stacked body,
• the stacked body including:
• a first stacked unit including:
• a first ferromagnetic layer, a magnetization of the first ferromagnetic layer being fixed in a first direction having a component perpendicular to a layer surface of the first ferromagnetic layer;
• a second ferromagnetic layer, a direction of a magnetization of the second ferromagnetic layer being variable in directions perpendicular to a layer surface of the second ferromagnetic layer;
• and
• a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer;
• and
• a second stacked unit stacked with the first stacked unit along a stacking direction, the first ferromagnetic layer, the second ferromagnetic layer, and the first nonmagnetic layer being stacked along the stacking direction, the second stacked unit including:
• a third ferromagnetic layer, a direction of a magnetization of the third ferromagnetic layer being variable in directions parallel to a layer surface of the third ferromagnetic layer;
• a fourth ferromagnetic layer stacked with the third ferromagnetic layer along the stacking direction, a magnetization of the fourth ferromagnetic layer being fixed in a second direction having a component perpendicular to a layer surface of the fourth ferromagnetic layer;
• and
• a second nonmagnetic layer provided between the third ferromagnetic layer and the fourth ferromagnetic layer,
• an outer edge of the fourth ferromagnetic layer projected onto a plane normal to the stacking direction including a portion outside an outer edge of the first stacked unit in the plane,
• a direction of the magnetization of the second ferromagnetic layer being configured to be determined to a direction in accordance with a direction of a current by causing an electron whose spin is polarized by passing the current through the stacked body along the stacking direction to act on the second ferromagnetic layer and by causing a rotating magnetic field generated from a precession of the magnetization of the third ferromagnetic layer to act on the second ferromagnetic layer;
• a first interconnection connected to one end of the magnetic recording element;
• and
• a second interconnection connected to another end of the magnetic recording element.