Ferroelectric memory with shunt device

A method comprising:

• initiating a standby mode of operation for a ferroelectric memory, the initiating comprising:
• triggering a shunt device coupled across a ferroelectric capacitor to short a first side of the ferroelectric capacitor to a second side of the ferroelectric capacitor via a compliment word line for the ferroelectric capacitor electrically coupled to the shunt device;
• and
• deactivating a word line for the ferroelectric capacitor at approximately a same time as triggering the shunt device via the compliment word line;
• applying a precharge from a bit line for the ferroelectric capacitor after triggering the shunt device via the compliment word line.

A ferroelectric memory apparatus comprising:

• a bit cell comprising:
• a ferroelectric capacitor electrically coupled to a plate line,
• a transmission gate coupled between the ferroelectric capacitor and a bit line, the transmission gate having an nmos gate electrically coupled to a word line and a pmos gate electrically coupled to a compliment word line, and
• an nmos switch electrically coupled across the ferroelectric capacitor with a gate of the nmos switch electrically coupled to the compliment word line to shunt the ferrocelectric capacitor in response to deactivation of the compliment word line;
• and
• a precharge switch electrically coupled to the bit line to selectively apply a precharge to the bit line in response to signaling received via a precharge line electrically coupled to a gate of the precharge switch, wherein the precharge line is configured to activate and deactivate the precharge switch at approximately a same time as deactivation and activation, respectively, of the compliment word line.