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US 8,508,973 B2Granted
Method of switching out-of-plane magnetic tunnel junction cells
AssigneeSeagate Technology LLC
InventorsInsik Jin, Xiaobin Wang, Yong Lu, Haiwen Xi
Life of this patent
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Abstract
A method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell, the method including: passing an AC switching current through the out-of-plane magnetic tunnel junction cell, wherein the AC switching current switches the magnetization orientation of the ferromagnetic free layer.
Claims20
A method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell, the method comprising:
- passing an AC switching current through the out-of-plane magnetic tunnel junction cell, wherein the AC switching current switches the magnetization orientation of the ferromagnetic free layer.
A magnetic memory system comprising:
- a magnetic tunnel junction cell having a ferromagnetic free layer, a barrier layer, and a ferromagnetic reference layer, wherein the barrier layer is positioned between the ferromagnetic reference layer and the ferromagnetic free layer, and the magnetization orientation of the ferromagnetic free layer and the ferromagnetic reference layer are out-of-plane;
- and
- an AC current source electrically connected to the magnetic tunnel junction cell.
A method of storing data electronically comprising:
- providing an out-of-plane magnetic tunnel junction memory cell, the out-of-plane magnetic tunnel junction memory cell comprising a ferromagnetic free layer, a barrier layer, and a ferromagnetic reference layer, wherein the barrier layer is positioned between the ferromagnetic reference layer and the ferromagnetic free layer, and the magnetization orientation of the ferromagnetic free layer and the ferromagnetic reference layer are out-of-plane;
- and
- passing an AC switching current through the out-of-plane magnetic tunnel junction cell, wherein the AC switching current switches the magnetization orientation of the ferromagnetic free layer, thereby storing a bit of data.
Dependencies are inferred from the claim text.