Semiconductor device and driving method of semiconductor device

A semiconductor device comprising:

• first to fourth driver circuits;
• and
• a memory cell array comprising a plurality of memory cells arranged in a matrix over the first to fourth driver circuits,
• wherein one of the plurality of memory cells comprises:
• a transistor comprising a gate electrode, a source electrode, a drain electrode, an oxide semiconductor layer, and a gate insulating layer;
• and
• a capacitor comprising a pair of electrode layers and a dielectric layer therebetween, wherein one of the pair of electrode layers comprises the source electrode or the drain electrode, and the dielectric layer comprises the gate insulating layer,
• wherein the first driver circuit and the second driver circuit are arranged so as to be substantially symmetrical with respect to a center point of the memory cell array,
• wherein the third driver circuit and the fourth driver circuit are arranged so as to be perpendicular to the first driver circuit and the second driver circuit, and
• wherein the third driver circuit and the fourth driver circuit are arranged so as to be substantially symmetrical with respect to the center point of the memory cell array.