Semiconductor module, MOS type solid-state image pickup device, camera and manufacturing method of camera

A camera comprising a semiconductor module, said semiconductor module comprising:

• a back-illuminated type MOS solid state image sensor chip comprising a substrate having a back surface via which light is received;
• a wiring layer on a surface of the substrate opposite to the back surface;
• a first plurality of micro pads on the wiring layer;
• a signal processing chip adjacent to the wiring layer;
• and
• a second plurality of micro pads on the signal processing chip,
• wherein,
• the substrate includes at least one photo electric conversion element,
• each one of said first plurality of micro pads is electrically connected to a corresponding one of the second plurality of micro pads via one of a plurality of micro bumps,
• said image sensor chip performs analog-digital conversion on an output of the at least one photo electric conversion element and outputs a resulting digital signal to the signal processing chip via a corresponding micro bump,
• a third plurality of micro pads are on a region corresponding to a periphery of the image sensor chip and outside a region of the at least one photo electric conversion element, and
• the third plurality of micro pads are connected to some of the second plurality of micro pads on the signal processing chip through some of the plurality of micro bumps and are configured to receive signals for driving the at least one photo electric conversion element.

A manufacturing method of camera comprising the steps of:

• forming a back-illuminated type MOS solid state image sensor chip comprising a substrate having a back surface via which light is received;
• forming a wiring layer on a surface of the substrate opposite to the back surface;
• forming a first plurality of micro pads on the wiring layer;
• placing a signal processing chip adjacent to the wiring layer;
• forming a second plurality of micro pads on the signal processing chip;
• and
• electrically connecting each one of said first plurality of micro pads to a corresponding one of said second plurality of micro pads via one of a plurality of micro bumps,
• wherein,
• the substrate includes at least one photo electric conversion element,
• said image sensor chip performs analog-digital conversion on an output of the at least one photo electric conversion element and outputs a resulting digital signal to the signal processing chip via a corresponding micro bump,
• a third plurality of micro pads are on a region corresponding to a periphery of the image sensor chip and outside a region of the at least one photo electric conversion element, and
• the third plurality of micro pads are connected to some of the second plurality of micro pads on the signal processing chip through some of the plurality of micro bumps and are configured to receive signals for driving the at least one photo electric conversion element.