Solid-state image sensing device and method of manufacturing the same

A solid-state image sensing device manufacturing method comprising:

• forming a semiconductor layer on an SOI substrate;
• forming a photodiode, an interlayer dielectric film, and an interconnecting layer in the semiconductor layer on a signal scanning line side;
• adhering a support substrate on the interlayer dielectric film on the signal scanning line side;
• removing the semiconductor substrate on a light illumination surface side opposite to the signal scanning line side, by using an insulating layer in the SOI substrate as a stopper;
• forming a p-type amorphous silicon compound layer on the insulating layer remaining on the light illumination surface side, and forming a hole storage layer by the p-type amorphous silicon compound layer near an interface between the semiconductor layer on the light illumination surface side and the insulating layer;
• forming a planarizing layer on the p-type amorphous silicon compound layer;
• forming an interlayer dielectric film on the planarizing layer, and forming a color filter in the interlayer dielectric film;
• and
• forming a microlens on the interlayer dielectric film on the light illumination surface side.