Method and system for developing low noise bandgap references

A system for a k-stacked ΔVBE generator for generating a ΔVBE, where k is greater than 1, comprising:

• an error amplifier configured to generate an output based on an error signal in a closed loop configuration;
• a first stack of the ΔVBE generator for producing a first ΔVBE, the first stack being coupled to the error amplifier to provide the error signal to the error amplifier, and including a first pair of transistors;
• and
• second to kth stacks of the ΔVBE generator for producing a second ΔVBE to a kth ΔVBE, respectively, the second to kth stacks being coupled to the first stack and including a second to kth pairs of transistors, wherein
• the first stack includes a first resistor at which the first ΔVBE is formed, the first resistor being coupled between bases of transistors in the first pair of transistors, the second to kth stacks respectively include second to kth resistors at which the second ΔVBE to the kth ΔVBE are formed, the second to kth resistors being coupled between bases of transistors in the second to kth pairs of transistors, respectively, and
• the ΔVBE is determined as the sum of first to kth voltages across the first to kth resistors.

An apparatus, comprising:

• a system configured for performing one or more functions based on a voltage reference;
• a k-stacked ΔVBE generator for generating a ΔVBE corresponding to the voltage reference, wherein k is greater than one and the k-stacked ΔVBE generator comprises:
• an error amplifier configured to generate an output based on an error signal in a closed loop configuration;
• a first stack of the ΔVBE generator for producing a first ΔVBE, the first stack being coupled to the error amplifier to provide the error signal to the error amplifier and including a first pair of transistors;
• second to kth stacks of the ΔVBE generator for producing a second ΔVBE to a kth ΔVBE, respectively, the second to kth stacks being coupled to the first stack and including second to kth pairs of transistors, wherein
• the first stack includes a first resistor at which the first ΔVBE is formed, the first resistor being coupled between bases of transistors in the first pair of transistors,
• the second to kth stacks respectively include second to kth resistors at which the second ΔVBE to the kth ΔVBE are formed, the second to kth resistors being coupled between bases of transistors in the second to kth pairs of transistors, respectively, and
• the ΔVBE is determined as the sum of first to kth voltages across the first to kth resistors.